Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction.
Identifieur interne : 000383 ( Main/Exploration ); précédent : 000382; suivant : 000384Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction.
Auteurs : RBID : pubmed:23646761English descriptors
- KwdEn :
- Electromagnetic Fields, Equipment Design, Equipment Failure Analysis, Indium (chemistry), Indium (radiation effects), Light, Luminescent Measurements (methods), Materials Testing, Nanostructures (chemistry), Nanostructures (radiation effects), Nanostructures (ultrastructure), Particle Size, Semiconductors, Spectrum Analysis.
- MESH :
- chemical , chemistry : Indium.
- chemical , radiation effects : Indium.
- chemistry : Nanostructures.
- methods : Luminescent Measurements.
- radiation effects : Nanostructures.
- ultrastructure : Nanostructures.
- Electromagnetic Fields, Equipment Design, Equipment Failure Analysis, Light, Materials Testing, Particle Size, Semiconductors, Spectrum Analysis.
Abstract
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD results confirm the bcc crystal structure of the as prepared In2O3 nanostructures. Strong and broad photoluminescence spectrum located at the green to red region with maximum intensity at 566 nm along with a weak ultraviolet emission at 338 nm were observed due to oxygen vacancy levels and free excitonic transitions, respectively. The valence band onset energy of 2.1 eV was observed from the XPS valence band spectrum, clearly justifies the alignment of Fermi level to the donor level created due to the presence of oxygen vacancies which were observed in the PL spectrum. The elemental ratio In:O in as prepared In2O3 was found to be 42:58 which is in close agreement with the stoichiometric value of 40:60. A downward shift was observed in the Raman peak positions due to a possible phonon confinement effect in the nanoparticles formed in bursting mechanism. Such single junction devices exhibit promising photovoltaic performance with fill factor and conversion efficiency of 21% and 0.2%, respectively, under concentrated AM1.5 illumination.
PubMed: 23646761
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction.</title><author><name sortKey="Bhat, Thirumaleshwara N" uniqKey="Bhat T">Thirumaleshwara N Bhat</name><affiliation wicri:level="1"><nlm:affiliation>Materials Research Centre, Indian Institute of Science, Bangalore 560012, India.</nlm:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Materials Research Centre, Indian Institute of Science, Bangalore 560012</wicri:regionArea></affiliation></author><author><name sortKey="Roul, Basanta" uniqKey="Roul B">Basanta Roul</name></author><author><name sortKey="Rajpalke, Mohana K" uniqKey="Rajpalke M">Mohana K Rajpalke</name></author><author><name sortKey="Kumar, Mahesh" uniqKey="Kumar M">Mahesh Kumar</name></author><author><name sortKey="Krupanidhi, S B" uniqKey="Krupanidhi S">S B Krupanidhi</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="RBID">pubmed:23646761</idno><idno type="pmid">23646761</idno><idno type="wicri:Area/Main/Corpus">000633</idno><idno type="wicri:Area/Main/Curation">000633</idno><idno type="wicri:Area/Main/Exploration">000383</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electromagnetic Fields</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Indium (chemistry)</term><term>Indium (radiation effects)</term><term>Light</term><term>Luminescent Measurements (methods)</term><term>Materials Testing</term><term>Nanostructures (chemistry)</term><term>Nanostructures (radiation effects)</term><term>Nanostructures (ultrastructure)</term><term>Particle Size</term><term>Semiconductors</term><term>Spectrum Analysis</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Indium</term></keywords><keywords scheme="MESH" type="chemical" qualifier="radiation effects" xml:lang="en"><term>Indium</term></keywords><keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanostructures</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Luminescent Measurements</term></keywords><keywords scheme="MESH" qualifier="radiation effects" xml:lang="en"><term>Nanostructures</term></keywords><keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanostructures</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Electromagnetic Fields</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Light</term><term>Materials Testing</term><term>Particle Size</term><term>Semiconductors</term><term>Spectrum Analysis</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD results confirm the bcc crystal structure of the as prepared In2O3 nanostructures. Strong and broad photoluminescence spectrum located at the green to red region with maximum intensity at 566 nm along with a weak ultraviolet emission at 338 nm were observed due to oxygen vacancy levels and free excitonic transitions, respectively. The valence band onset energy of 2.1 eV was observed from the XPS valence band spectrum, clearly justifies the alignment of Fermi level to the donor level created due to the presence of oxygen vacancies which were observed in the PL spectrum. The elemental ratio In:O in as prepared In2O3 was found to be 42:58 which is in close agreement with the stoichiometric value of 40:60. A downward shift was observed in the Raman peak positions due to a possible phonon confinement effect in the nanoparticles formed in bursting mechanism. Such single junction devices exhibit promising photovoltaic performance with fill factor and conversion efficiency of 21% and 0.2%, respectively, under concentrated AM1.5 illumination.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">23646761</PMID><DateCreated><Year>2013</Year><Month>05</Month><Day>07</Day></DateCreated><DateCompleted><Year>2013</Year><Month>06</Month><Day>27</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Print">1533-4880</ISSN><JournalIssue CitedMedium="Print"><Volume>13</Volume><Issue>1</Issue><PubDate><Year>2013</Year><Month>Jan</Month></PubDate></JournalIssue><Title>Journal of nanoscience and nanotechnology</Title><ISOAbbreviation>J Nanosci Nanotechnol</ISOAbbreviation></Journal><ArticleTitle>Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction.</ArticleTitle><Pagination><MedlinePgn>498-503</MedlinePgn></Pagination><Abstract><AbstractText>The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD results confirm the bcc crystal structure of the as prepared In2O3 nanostructures. Strong and broad photoluminescence spectrum located at the green to red region with maximum intensity at 566 nm along with a weak ultraviolet emission at 338 nm were observed due to oxygen vacancy levels and free excitonic transitions, respectively. The valence band onset energy of 2.1 eV was observed from the XPS valence band spectrum, clearly justifies the alignment of Fermi level to the donor level created due to the presence of oxygen vacancies which were observed in the PL spectrum. The elemental ratio In:O in as prepared In2O3 was found to be 42:58 which is in close agreement with the stoichiometric value of 40:60. A downward shift was observed in the Raman peak positions due to a possible phonon confinement effect in the nanoparticles formed in bursting mechanism. Such single junction devices exhibit promising photovoltaic performance with fill factor and conversion efficiency of 21% and 0.2%, respectively, under concentrated AM1.5 illumination.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Bhat</LastName><ForeName>Thirumaleshwara N</ForeName><Initials>TN</Initials><Affiliation>Materials Research Centre, Indian Institute of Science, Bangalore 560012, India.</Affiliation></Author><Author ValidYN="Y"><LastName>Roul</LastName><ForeName>Basanta</ForeName><Initials>B</Initials></Author><Author ValidYN="Y"><LastName>Rajpalke</LastName><ForeName>Mohana K</ForeName><Initials>MK</Initials></Author><Author ValidYN="Y"><LastName>Kumar</LastName><ForeName>Mahesh</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Krupanidhi</LastName><ForeName>S B</ForeName><Initials>SB</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>J Nanosci Nanotechnol</MedlineTA><NlmUniqueID>101088195</NlmUniqueID><ISSNLinking>1533-4880</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>4OO9KME22D</RegistryNumber><NameOfSubstance>indium oxide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Electromagnetic Fields</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="Y">radiation effects</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Light</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Luminescent Measurements</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanostructures</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">radiation effects</QualifierName><QualifierName MajorTopicYN="Y">ultrastructure</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Particle Size</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Spectrum Analysis</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>5</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>5</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>6</Month><Day>29</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">23646761</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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